{"title":"Current enhanced PNPN tunnel field-effect transistor with L-shaped gate","authors":"P. Xu, Xinnan Lin","doi":"10.1109/EDSSC.2017.8126402","DOIUrl":null,"url":null,"abstract":"In this paper, a new PNPN tunnel field-effect transistor with L-shaped gate (LG-PNPN TFET) is proposed and investigated by numerical device simulator bringing significant on-state current enhancement. Higher drive current is achieved at VDD = 1.0V than traditional PNPN TFET because of both the line and point tunneling between the source and N+ pocket. Key parameters like the pocket width and doping concentration are further studied for device performance optimization.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a new PNPN tunnel field-effect transistor with L-shaped gate (LG-PNPN TFET) is proposed and investigated by numerical device simulator bringing significant on-state current enhancement. Higher drive current is achieved at VDD = 1.0V than traditional PNPN TFET because of both the line and point tunneling between the source and N+ pocket. Key parameters like the pocket width and doping concentration are further studied for device performance optimization.
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