First demonstration of a wrap-gated CNT-FET with vertically-suspended channels

Abstract

Fully wrap-gated carbon nanotube (CNT) transistors with vertically suspended (VS) semiconducting single-walled CNTs, purified up to 99.9%, are demonstrated for the first time. Without a sacrifice of scalability, remarkably enhanced gate controllability and charge transport capabilities were achieved due to the geometrical advantage of the gate-all-around (GAA) structure with multiple channels. The VS channels were formed with the aid of a silicon-processed vertically integrated nanowire frame, offering high completeness and compatibility with silicon processes. This approach will increase the applicability of CNTs toward high-performance emerging materials.