{"title":"Hot-electron camel transistor","authors":"J. Shannon","doi":"10.1049/IJ-SSED.1979.0030","DOIUrl":null,"url":null,"abstract":"A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"335 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED.1979.0030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 43
Abstract
A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.
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