ESD protection design on T/R switch with embedded SCR in CMOS process

Abstract

ESD protection design for the RF transmit/receive switch (T/R switch) with embedded silicon-controlled rectifier (SCR) is proposed, where the SCR device is embedded in the ESD diode and the transistors of T/R switch by layout skill. Silicon chip verified in a 90-nm CMOS process has been measured by TLP and HBM ESD test to confirm its efficiency for ESD protection. The parasitic capacitance from the ESD devices was also measured. Failure analysis by SEM was performed to find the burned-out site on the T/R switch with the proposed design. From the failure analysis SEM pictures, the embedded SCR in the proposed design is actually triggered on to discharge ESD current.