On a possibility to reduce the electron beam energy used for pumping of ZnSe-based green semiconductor laser heterostructures

Abstract

Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12–300 K and electron energies of 3.5–8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on the possibility to reduce the electron energy at room temperature down to 1–2 keV value.