{"title":"An Ion Implant Induced Instability Mechanism in CMOS/SOS Device","authors":"Eila B. Spialter, J. Brandewie, R. Kjar","doi":"10.1109/IRPS.1984.362037","DOIUrl":null,"url":null,"abstract":"A complex charge trapping instability was identified in CMOS/SOS circuits which had failed during extended life tests. The cause of this instability was shown to be latent oxide damage from forced oxide currents during ion implantation. A conducting wafer coating during ion implant was found to eliminate the forced oxide current and to prevent the instability.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A complex charge trapping instability was identified in CMOS/SOS circuits which had failed during extended life tests. The cause of this instability was shown to be latent oxide damage from forced oxide currents during ion implantation. A conducting wafer coating during ion implant was found to eliminate the forced oxide current and to prevent the instability.
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