{"title":"Ferroelectric One Transistor/One Capacitor Memory Cell","authors":"M. Pešić, U. Schroeder, T. Mikolajick","doi":"10.1016/B978-0-08-102430-0.00019-X","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"258 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/B978-0-08-102430-0.00019-X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}