Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00016-4
H. Mulaosmanovic, S. Slesazeck
{"title":"Polarization Switching in HfO2-Based Devices","authors":"H. Mulaosmanovic, S. Slesazeck","doi":"10.1016/B978-0-08-102430-0.00016-4","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00016-4","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"28 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120905510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/b978-0-08-102430-0.09991-5
N. Balke, Rohit Batra, U. Böttger, E. Breyer, Keum Do Kim, C. Fancher, F. Fengler, S. Fujii, Hiroshi Funakubo, D. Griesche, E. Grimley, A. Gruverman, M. Hoffmann, Cheol Seong Hwang, S. Hyun, J. Ihlefeld, Brienne S. Johnson, Jacob L. Jones, Alfred Kersch, Han Joon Kim, Christopher Künneth, Luca Larcher, J. Lebeau, Young Hwan Lee, S. Migita, Thomas Mikolajick, J. Mueller, H. Mulaosmanovic, M. Park, M. Pešić, R. Ramprasad, G. Rossetti, Masumi Saitoh, T. Schenk, T. Schneller, U. Schroeder, S. Shibayama, Takao Shimizu, S. Slesazeck, S. Starschich, I. Stolichnov, X. Tian, A. Toriumi, L. Xu
{"title":"Contributors","authors":"N. Balke, Rohit Batra, U. Böttger, E. Breyer, Keum Do Kim, C. Fancher, F. Fengler, S. Fujii, Hiroshi Funakubo, D. Griesche, E. Grimley, A. Gruverman, M. Hoffmann, Cheol Seong Hwang, S. Hyun, J. Ihlefeld, Brienne S. Johnson, Jacob L. Jones, Alfred Kersch, Han Joon Kim, Christopher Künneth, Luca Larcher, J. Lebeau, Young Hwan Lee, S. Migita, Thomas Mikolajick, J. Mueller, H. Mulaosmanovic, M. Park, M. Pešić, R. Ramprasad, G. Rossetti, Masumi Saitoh, T. Schenk, T. Schneller, U. Schroeder, S. Shibayama, Takao Shimizu, S. Slesazeck, S. Starschich, I. Stolichnov, X. Tian, A. Toriumi, L. Xu","doi":"10.1016/b978-0-08-102430-0.09991-5","DOIUrl":"https://doi.org/10.1016/b978-0-08-102430-0.09991-5","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117336242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00017-6
F. Fengler, M. Park, T. Schenk, M. Pešić, U. Schroeder
{"title":"Field Cycling Behavior of Ferroelectric HfO2-Based Capacitors","authors":"F. Fengler, M. Park, T. Schenk, M. Pešić, U. Schroeder","doi":"10.1016/B978-0-08-102430-0.00017-6","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00017-6","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125505658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00010-3
U. Böttger, S. Starschich, D. Griesche, T. Schneller
{"title":"Dopants in Chemical Solution-Deposited HfO2 Films","authors":"U. Böttger, S. Starschich, D. Griesche, T. Schneller","doi":"10.1016/B978-0-08-102430-0.00010-3","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00010-3","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128036170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00002-4
Brienne S. Johnson, Jacob L. Jones
{"title":"Structures, Phase Equilibria, and Properties of HfO2","authors":"Brienne S. Johnson, Jacob L. Jones","doi":"10.1016/B978-0-08-102430-0.00002-4","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00002-4","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133936571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00012-7
M. Park, Takao Shimizu, H. Funakubo, U. Schroeder
{"title":"Structural Origin of Temperature-Dependent Ferroelectricity","authors":"M. Park, Takao Shimizu, H. Funakubo, U. Schroeder","doi":"10.1016/B978-0-08-102430-0.00012-7","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00012-7","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114999576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00025-5
H. Mulaosmanovic, S. Slesazeck
{"title":"Ferroelectric Field Effect Transistor for Neuromorphic Applications","authors":"H. Mulaosmanovic, S. Slesazeck","doi":"10.1016/B978-0-08-102430-0.00025-5","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00025-5","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127297499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00001-2
J. Ihlefeld
{"title":"Fundamentals of Ferroelectric and Piezoelectric Properties","authors":"J. Ihlefeld","doi":"10.1016/B978-0-08-102430-0.00001-2","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00001-2","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132234163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00007-3
M. Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, S. Hyun, C. Hwang
{"title":"Impact of Zr Content in Atomic Layer Deposited Hf1−Zr O2 Thin Films","authors":"M. Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, S. Hyun, C. Hwang","doi":"10.1016/B978-0-08-102430-0.00007-3","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00007-3","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134599921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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