A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988996

Woongje Sung, Kijeong Han, B. Baliga

引用次数: 20

Abstract

This paper provides detailed comparison of electrical characteristics of accumulation mode and inversion mode 1.2 kV SiC MOSFETs, including performance at high temperatures (up to 200 °C). Statistical data measured from over 50 dies on 6-inch SiC wafers was used for this comparison. It is concluded that the accumulation mode SiC MOSFET provides a lower specific on-resistance than the inversion mode MOSFET due to a higher channel mobility (∼ 22 cm2/V·s) while achieving a reasonable threshold voltage (∼ 2.3 V). Based on statistical data analyses, a strong correlation between the threshold voltage and the field effect channel mobility was identified.

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SiC mosfet沟道设计之比较研究:累积模式沟道与反转模式沟道

本文详细比较了1.2 kV SiC mosfet的积累模式和反转模式的电特性，包括高温(高达200°C)下的性能。从50多个6英寸SiC晶圆上测量的统计数据用于此比较。结果表明，积累模式SiC MOSFET具有较高的沟道迁移率(~ 22 cm2/V·s)，且具有合理的阈值电压(~ 2.3 V)，因此比逆变模式MOSFET具有更低的导通电阻。基于统计数据分析，阈值电压与场效应沟道迁移率之间存在很强的相关性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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