{"title":"Latch-up Model of Non-collinear PNPN Structures","authors":"Collin Reiman, N. Jack, E. Rosenbaum","doi":"10.23919/EOS/ESD.2018.8509739","DOIUrl":null,"url":null,"abstract":"A scalable I-V model for latch-up in non-collinear PNPN devices is adapted from a previous model for collinear SCR devices. The model is applied to 14-nm FinFET test structures. Layout scaling trends for key latch-up metrics, such as holding and trigger voltage, are captured by the model in circuit simulation. TCAD simulation is used to gain physical insight into the behavior of non-collinear PNPN devices.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EOS/ESD.2018.8509739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A scalable I-V model for latch-up in non-collinear PNPN devices is adapted from a previous model for collinear SCR devices. The model is applied to 14-nm FinFET test structures. Layout scaling trends for key latch-up metrics, such as holding and trigger voltage, are captured by the model in circuit simulation. TCAD simulation is used to gain physical insight into the behavior of non-collinear PNPN devices.
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