{"title":"High temperature simulation of 6H- and 4H-silicon carbide MOSFETs","authors":"S. F. Shams, K. Sundaram, L. Chow","doi":"10.1109/SECON.1998.673347","DOIUrl":null,"url":null,"abstract":"Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating at two different temperatures has been examined.","PeriodicalId":281991,"journal":{"name":"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1998.673347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating at two different temperatures has been examined.
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