{"title":"Simulation of Ge implanted SiGe-channel p-MOSFETs","authors":"G. Niu, G. Ruan","doi":"10.1109/TENCON.1995.496427","DOIUrl":null,"url":null,"abstract":"This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO/sub 2/-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO/sub 2/-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range.