{"title":"Novel FFT processor with parallel-in-parallel-out in normal order","authors":"Hsiang-Sheng Hu, Hsiao-Yun Chen, S. Jou","doi":"10.1109/VDAT.2009.5158117","DOIUrl":null,"url":null,"abstract":"A novel FFT processor that can provide parallel-in-parallel-out in normal order is proposed for high throughput required OFDM communication system, such as discrete Fourier transform (DFT)-based channel estimation in IEEE 802.16e. The hardware implementation results show the proposed 1024-point FFT architecture can achieve the throughput rate up to 1.28 G samples/sec and the execution time down to 7.3 us when working at 160 MHz. When working at the system required 83.3 MHz, it consumes 21.7 mW with 134474 gates (including memory) that occupy 0.471 mm2 by using 90 nm, 1V CMOS process.","PeriodicalId":246670,"journal":{"name":"2009 International Symposium on VLSI Design, Automation and Test","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Design, Automation and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2009.5158117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A novel FFT processor that can provide parallel-in-parallel-out in normal order is proposed for high throughput required OFDM communication system, such as discrete Fourier transform (DFT)-based channel estimation in IEEE 802.16e. The hardware implementation results show the proposed 1024-point FFT architecture can achieve the throughput rate up to 1.28 G samples/sec and the execution time down to 7.3 us when working at 160 MHz. When working at the system required 83.3 MHz, it consumes 21.7 mW with 134474 gates (including memory) that occupy 0.471 mm2 by using 90 nm, 1V CMOS process.