Fawad Saeed, Sajid Hussain, Ahmad Raza, Abida Perveen, A. Asghar, N. Din, Qasim Khan, W. Lei
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引用次数: 0
Abstract
Owing to superb photophysical properties and utilization in quantum dot light-emitting diodes (QLEDs), perovskite-based cesium lead bromide (CsPbBr3) quantum dots have gained significant research attention. Solvent engineering can improve the QDs film and thus increase the efficiency of PeLED. The QDs film was post-treated with solvent to enhance surface morphology and photoluminance while simultaneously passivating surface structure and minimizing exciton quenching. Using IPA as a solvent treatment lowered the device turn-on voltage VT (1 cd m-2) from 2.6 V to 2.2 V. Moreover, Invert structure devices showed 2557 cd m-2 luminance and 10.7 cd A-1 current efficiency. These findings suggest that PeLED QDs-based devices can be used to design next-generation lighting and displays.
钙钛矿基铯溴化铅(CsPbBr3)量子点由于其优异的光物理性能和在量子点发光二极管(qled)中的应用，得到了广泛的研究关注。溶剂工程可以改善量子点薄膜，从而提高PeLED的效率。对QDs薄膜进行溶剂后处理，增强表面形貌和光致发光，同时钝化表面结构，减少激子猝灭。采用异丙酸作为溶剂处理，将器件的导通电压VT (1 cd - m-2)从2.6 V降低到2.2 V。此外，逆变结构器件的亮度为2557 cd m-2，电流效率为10.7 cd A-1。这些发现表明，基于PeLED qds的设备可用于设计下一代照明和显示器。
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