{"title":"The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers","authors":"S. C. Subramaniam, A. Rezazadeh","doi":"10.1109/EMICC.2006.282738","DOIUrl":null,"url":null,"abstract":"The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times106 Omega/sq and ~7times106 Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe+ in InGaAs material","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times106 Omega/sq and ~7times106 Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe+ in InGaAs material
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