D. Nirmal, S. Varughese, D. Joy, F. Princess, P. V. Kumar
{"title":"Design and simulation of AlGaN/GaN HFET","authors":"D. Nirmal, S. Varughese, D. Joy, F. Princess, P. V. Kumar","doi":"10.1109/ICDCSYST.2012.6188704","DOIUrl":null,"url":null,"abstract":"GaN material has a very good potential in today's semiconductor world because of its highlighted characters like wide band gap and high saturation velocity. The combined effect of piezoelectric polarization and spontaneous polarization provides a high electron concentration called 2DEG in Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN interface which allows higher mobility of carriers in interface than in bulk GaN material. 2-D simulation of power Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaNHFET device is carried out here and the effect of different parameters are analysed and studied using Sentaurus TCAD software. Prameters like I<sub>d</sub>V<sub>g</sub>, I<sub>d</sub>V<sub>d</sub>, g<sub>m</sub>etc are obtained. Several analysis are done with source to gate length, passivation layer etc.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2012.6188704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
GaN material has a very good potential in today's semiconductor world because of its highlighted characters like wide band gap and high saturation velocity. The combined effect of piezoelectric polarization and spontaneous polarization provides a high electron concentration called 2DEG in Al0.3Ga0.7N/GaN interface which allows higher mobility of carriers in interface than in bulk GaN material. 2-D simulation of power Al0.3Ga0.7N/GaNHFET device is carried out here and the effect of different parameters are analysed and studied using Sentaurus TCAD software. Prameters like IdVg, IdVd, gmetc are obtained. Several analysis are done with source to gate length, passivation layer etc.
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