Gengyao Li, He Li, A. Deshpande, Xiao Li, Longya Xu, F. Luo, Jin Wang
{"title":"Comparison between 1.7 kV SiC SJT and MOSFET power modules","authors":"Gengyao Li, He Li, A. Deshpande, Xiao Li, Longya Xu, F. Luo, Jin Wang","doi":"10.1109/WIPDA.2016.7799903","DOIUrl":null,"url":null,"abstract":"In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection, gate drive design and system level thermal management design. Since the SiC SJT is a new power transistor with unique current driven mechanism. A dedicated section discusses the SiC SJT power module gate drive configuration and device false turn on suppress as well. In a summary, 1.7 kV SiC SJT shows superior on state conductivity, but similar switching performance compared to 1.7 kV SiC MOSFET power modules.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection, gate drive design and system level thermal management design. Since the SiC SJT is a new power transistor with unique current driven mechanism. A dedicated section discusses the SiC SJT power module gate drive configuration and device false turn on suppress as well. In a summary, 1.7 kV SiC SJT shows superior on state conductivity, but similar switching performance compared to 1.7 kV SiC MOSFET power modules.
本文对1.7 kV SiC超级结晶体管(SJT)功率模块和1.7 kV SiC MOSFET功率模块进行了综合评价。在较宽的电流范围和温度范围下，对器件的静态和动态性能进行了提取和比较。本文提供的数据可作为中压功率转换系统功率晶体管选择、栅极驱动设计和系统级热管理设计的输入。由于SiC SJT是一种具有独特电流驱动机制的新型功率晶体管。一个专门的部分讨论了SiC SJT电源模块栅极驱动配置和器件误开抑制。综上所述，与1.7 kV SiC MOSFET功率模块相比，1.7 kV SiC SJT具有优越的状态电导率，但开关性能相似。
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
