A Low Power SRAM Architecture Based on Segmented Virtual Grounding

M. Sharifkhani, M. Sachdev
{"title":"A Low Power SRAM Architecture Based on Segmented Virtual Grounding","authors":"M. Sharifkhani, M. Sachdev","doi":"10.1145/1165573.1165635","DOIUrl":null,"url":null,"abstract":"A novel architecture for the reduction of both dynamic and static power consumption of static random access memories (SRAM) is presented. The scheme is based on the segmented virtual grounding (SVGND) of the SRAM cells. Substantial leakage reduction is achieved by increasing the threshold voltage of the cell transistors through body effect. The write and read energy consumptions are reduced significantly by decreasing the bitline voltage swing and the number of bitlines affected in each transaction. Unlike recently reported low-power schemes, SVGND allows multiple words to be placed in each row while keeping the dynamic power low. This feature is achieved by introducing an additional operation mode to the SRAM cells. The architecture is implemented in a 130nm CMOS technology. Using this scheme, the read and write array energy consumption can be saved by 44% and 84% respectively. Measurement results portraits 15 times leakage reduction compared to the conventional scheme","PeriodicalId":119229,"journal":{"name":"ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1165573.1165635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

A novel architecture for the reduction of both dynamic and static power consumption of static random access memories (SRAM) is presented. The scheme is based on the segmented virtual grounding (SVGND) of the SRAM cells. Substantial leakage reduction is achieved by increasing the threshold voltage of the cell transistors through body effect. The write and read energy consumptions are reduced significantly by decreasing the bitline voltage swing and the number of bitlines affected in each transaction. Unlike recently reported low-power schemes, SVGND allows multiple words to be placed in each row while keeping the dynamic power low. This feature is achieved by introducing an additional operation mode to the SRAM cells. The architecture is implemented in a 130nm CMOS technology. Using this scheme, the read and write array energy consumption can be saved by 44% and 84% respectively. Measurement results portraits 15 times leakage reduction compared to the conventional scheme
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种基于分段虚拟接地的低功耗SRAM结构
提出了一种降低静态随机存取存储器(SRAM)动态和静态功耗的新架构。该方案基于SRAM单元的分段虚拟接地(SVGND)。通过体效应提高电池晶体管的阈值电压,实现了大幅度的漏电减少。通过减少位线电压波动和每个事务中受影响的位线数量,可以显著降低写入和读取能耗。与最近报道的低功耗方案不同,SVGND允许在每行中放置多个单词,同时保持低动态功耗。此功能是通过向SRAM单元引入额外的操作模式来实现的。该架构采用130nm CMOS技术实现。采用该方案,读写阵列能耗可分别节省44%和84%。测量结果显示,与传统方案相比,泄漏减少了15倍
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Novel Dynamic Power Cutoff Technique (DPCT) for Active Leakage Reduction in Deep Submicron CMOS Circuits Dynamic Thermal Clock Skew Compensation using Tunable Delay Buffers Power Reduction in an H.264 Encoder Through Algorithmic and Logic Transformations An Efficient Chip-level Time Slack Allocation Algorithm for Dual-Vdd FPGA Power Reduction Energy-efficient Motion Estimation using Error-Tolerance
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1