K. Imokawa, N. Tanaka, A. Suwa, D. Nakamura, T. Sadoh, T. Goto, H. Ikenoue
{"title":"Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication","authors":"K. Imokawa, N. Tanaka, A. Suwa, D. Nakamura, T. Sadoh, T. Goto, H. Ikenoue","doi":"10.23919/AM-FPD.2018.8437343","DOIUrl":null,"url":null,"abstract":"We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm<sup>2</sup>/Vs, 1.5×10<sup>18</sup> cm<sup>−3</sup>, 14.6 %, and 0.08 Ω.cm, respectively.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2018.8437343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm2/Vs, 1.5×1018 cm−3, 14.6 %, and 0.08 Ω.cm, respectively.
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