A widely configurable EPROM memory compiler for embedded applications

H. Lim, A. Shubat, V. Duvalyan, S. Dandamudi, S. Raviv, A. Kablanian
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引用次数: 4

Abstract

An EPROM memory configurable in size and word width has been designed into a silicon compiler framework. The memory compiler software enables the hardware design to be encapsulated to facilitate re-use. The compiler supports memory densities ranging from 64 kb to 512 kb. The design is implemented in a 0.6 um 2-metal EPROM process. The 32 Kb/spl times/8 instance measures 1.32 mm/spl times/1.83 mm and at nominal process and environment (T/sub j/=25/spl deg/C, VDD=5.0 V) the simulated address access time is 29.4 nsec, read cycle time is 32.6 nsec, and power dissipation is 71.4 mW at 30 MHz operating speed. A streamlined design flow for integrating a new design into the compiler framework allowed for a three month design cycle from product definition to tapeout of the first instance.
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一个广泛配置的EPROM内存编译器,用于嵌入式应用程序
在一个硅编译器框架中设计了一个可配置大小和字宽的EPROM存储器。内存编译器软件使硬件设计被封装,便于重用。编译器支持64kb到512kb的内存密度。该设计是在0.6 um的2金属EPROM工艺中实现的。32 Kb/spl times/8实例测量1.32 mm/spl times/1.83 mm,在标称工艺和环境下(T/sub j/=25/spl℃,VDD=5.0 V),模拟地址访问时间为29.4 nsec,读取周期为32.6 nsec,功耗为71.4 mW,工作速度为30 MHz。将新设计集成到编译器框架中的流线型设计流程允许从产品定义到第一个实例结束的三个月的设计周期。
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