H. Lim, A. Shubat, V. Duvalyan, S. Dandamudi, S. Raviv, A. Kablanian
{"title":"A widely configurable EPROM memory compiler for embedded applications","authors":"H. Lim, A. Shubat, V. Duvalyan, S. Dandamudi, S. Raviv, A. Kablanian","doi":"10.1109/MTDT.1998.705940","DOIUrl":null,"url":null,"abstract":"An EPROM memory configurable in size and word width has been designed into a silicon compiler framework. The memory compiler software enables the hardware design to be encapsulated to facilitate re-use. The compiler supports memory densities ranging from 64 kb to 512 kb. The design is implemented in a 0.6 um 2-metal EPROM process. The 32 Kb/spl times/8 instance measures 1.32 mm/spl times/1.83 mm and at nominal process and environment (T/sub j/=25/spl deg/C, VDD=5.0 V) the simulated address access time is 29.4 nsec, read cycle time is 32.6 nsec, and power dissipation is 71.4 mW at 30 MHz operating speed. A streamlined design flow for integrating a new design into the compiler framework allowed for a three month design cycle from product definition to tapeout of the first instance.","PeriodicalId":420476,"journal":{"name":"Proceedings. International Workshop on Memory Technology, Design and Testing (Cat. No.98TB100236)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Workshop on Memory Technology, Design and Testing (Cat. No.98TB100236)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1998.705940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
An EPROM memory configurable in size and word width has been designed into a silicon compiler framework. The memory compiler software enables the hardware design to be encapsulated to facilitate re-use. The compiler supports memory densities ranging from 64 kb to 512 kb. The design is implemented in a 0.6 um 2-metal EPROM process. The 32 Kb/spl times/8 instance measures 1.32 mm/spl times/1.83 mm and at nominal process and environment (T/sub j/=25/spl deg/C, VDD=5.0 V) the simulated address access time is 29.4 nsec, read cycle time is 32.6 nsec, and power dissipation is 71.4 mW at 30 MHz operating speed. A streamlined design flow for integrating a new design into the compiler framework allowed for a three month design cycle from product definition to tapeout of the first instance.