CMOS LNA design at 30 GHz — A case study

A. Antonopoulos, K. Papathanasiou, M. Bucher
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引用次数: 8

Abstract

This paper presents a case study of LNA design at 30 GHz. Two single-stage LNA topologies are implemented, namely a magnetic feedback LNA and a cascode LNA. The simulation results reveal that a single-stage LNA can deliver adequate power gain along with low noise figure and high linearity even at mm-wave frequencies. The cascode LNA topology, using SNIM is analyzed and described in detail. The post layout simulations give a forward gain (S21) of 5.9 dB, a reverse isolation (-S12) of 18.1 dB, an input reflection (S11) of -11.8 dB and an output reflection (S22) of -11.4 dB. The NF of the circuit is 3.9 dB while the corresponding IIP3 is 4.9 dBm. The power consumption is 7.2 mW and the circuit occupies 0.37 mm2 including the pads. The design is implemented in TSMC's LP 90 nm CMOS process.
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30ghz的CMOS LNA设计-一个案例研究
本文给出了30ghz下LNA设计的实例研究。实现了两种单级LNA拓扑,即磁反馈LNA和级联码LNA。仿真结果表明,即使在毫米波频率下,单级LNA也能提供足够的功率增益、低噪声系数和高线性度。对采用SNIM的级联LNA拓扑结构进行了详细的分析和描述。后置布局仿真的正向增益(S21)为5.9 dB,反向隔离(-S12)为18.1 dB,输入反射(S11)为-11.8 dB,输出反射(S22)为-11.4 dB。电路的NF值为3.9 dB, IIP3值为4.9 dBm。功耗为7.2 mW,电路占地0.37 mm2,包括焊盘。该设计采用台积电LP 90纳米CMOS工艺实现。
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