{"title":"Design of a 1.8V 8-bit 500MSPS folding-interpolation CMOS A/D converter with a folder averaging technique","authors":"Dongjin Lee, Jaewon Song, Jongha Shin, Sanghoon Hwang, Minkyu Song, Tad Wysocki","doi":"10.1109/ECCTD.2007.4529606","DOIUrl":null,"url":null,"abstract":"In this paper, a CMOS analog-to-digital converter (ADC) with an 8-bit 500 MSPS at 1.8 V is designed. The architecture of the proposed ADC is based on a Folding ADC with a cascaded-folding and a cascaded-interpolation structure. A self-linearized preamplifier with source degeneration technique and a folder averaging technique for the high-performance are introduced. Further, a novel auto-switching encoder is also proposed. The chip has been fabricated with 0.18mu m 1-poly 5-metal CMOS technology. The active chip area is 0.79 mm2 and it consumes about 200 mW at 1.8 V power supply. The DNL and INL are within plusmn0.6/plusmn0.6LSB, respectively. The measured result of SNDR is 47.05dB.","PeriodicalId":445822,"journal":{"name":"2007 18th European Conference on Circuit Theory and Design","volume":"204 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 18th European Conference on Circuit Theory and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2007.4529606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
In this paper, a CMOS analog-to-digital converter (ADC) with an 8-bit 500 MSPS at 1.8 V is designed. The architecture of the proposed ADC is based on a Folding ADC with a cascaded-folding and a cascaded-interpolation structure. A self-linearized preamplifier with source degeneration technique and a folder averaging technique for the high-performance are introduced. Further, a novel auto-switching encoder is also proposed. The chip has been fabricated with 0.18mu m 1-poly 5-metal CMOS technology. The active chip area is 0.79 mm2 and it consumes about 200 mW at 1.8 V power supply. The DNL and INL are within plusmn0.6/plusmn0.6LSB, respectively. The measured result of SNDR is 47.05dB.