Haitong Li, Tony F. Wu, Abbas Rahimi, Kai-Shin Li, M. Rusch, Chang-Hsien Lin, Juo-Luen Hsu, M. Sabry, S. Eryilmaz, Joon Sohn, W. Chiu, Min-Cheng Chen, Tsung-Ta Wu, J. Shieh, W. Yeh, J. Rabaey, S. Mitra, H. Wong
{"title":"Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition","authors":"Haitong Li, Tony F. Wu, Abbas Rahimi, Kai-Shin Li, M. Rusch, Chang-Hsien Lin, Juo-Luen Hsu, M. Sabry, S. Eryilmaz, Joon Sohn, W. Chiu, Min-Cheng Chen, Tsung-Ta Wu, J. Shieh, W. Yeh, J. Rabaey, S. Mitra, H. Wong","doi":"10.1109/IEDM.2016.7838428","DOIUrl":null,"url":null,"abstract":"The ability to learn from few examples, known as one-shot learning, is a hallmark of human cognition. Hyperdimensional (HD) computing is a brain-inspired computational framework capable of one-shot learning, using random binary vectors with high dimensionality. Device-architecture co-design of HD cognitive computing systems using 3D VRRAM/CMOS is presented for language recognition. Multiplication-addition-permutation (MAP), the central operations of HD computing, are experimentally demonstrated on 4-layer 3D VRRAM/FinFET as non-volatile in-memory MAP kernels. Extensive cycle-to-cycle (up to 1012 cycles) and wafer-level device-to-device (256 RRAMs) experiments are performed to validate reproducibility and robustness. For 28-nm node, the 3D in-memory architecture reduces total energy consumption by 52.2% with 412 times less area compared with LP digital design (using registers as memory), owing to the energy-efficient VRRAM MAP kernels and dense connectivity. Meanwhile, the system trained with 21 samples texts achieves 90.4% accuracy recognizing 21 European languages on 21,000 test sentences. Hard-error analysis shows the HD architecture is amazingly resilient to RRAM endurance failures, making the use of various types of RRAMs/CBRAMs (1k ∼ 10M endurance) feasible.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"361 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"101","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838428","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 101
Abstract
The ability to learn from few examples, known as one-shot learning, is a hallmark of human cognition. Hyperdimensional (HD) computing is a brain-inspired computational framework capable of one-shot learning, using random binary vectors with high dimensionality. Device-architecture co-design of HD cognitive computing systems using 3D VRRAM/CMOS is presented for language recognition. Multiplication-addition-permutation (MAP), the central operations of HD computing, are experimentally demonstrated on 4-layer 3D VRRAM/FinFET as non-volatile in-memory MAP kernels. Extensive cycle-to-cycle (up to 1012 cycles) and wafer-level device-to-device (256 RRAMs) experiments are performed to validate reproducibility and robustness. For 28-nm node, the 3D in-memory architecture reduces total energy consumption by 52.2% with 412 times less area compared with LP digital design (using registers as memory), owing to the energy-efficient VRRAM MAP kernels and dense connectivity. Meanwhile, the system trained with 21 samples texts achieves 90.4% accuracy recognizing 21 European languages on 21,000 test sentences. Hard-error analysis shows the HD architecture is amazingly resilient to RRAM endurance failures, making the use of various types of RRAMs/CBRAMs (1k ∼ 10M endurance) feasible.