Crosstalk evaluation: the influence of inductance and routing orientation

D. Deschacht, A. Lopez
{"title":"Crosstalk evaluation: the influence of inductance and routing orientation","authors":"D. Deschacht, A. Lopez","doi":"10.1109/ICM.2004.1434241","DOIUrl":null,"url":null,"abstract":"Rapid progress in integrated circuit technology has led to an increase in the switching speed of the digital chip. As a result, there is a growing interest in the inductance associated with signal lines. In this paper, we show the influence of inductance and routing orientation on crosstalk voltage by considering two configurations of parallel coupled interconnects, one with both drivers on the same side, and the other with the drivers in opposite directions. For a typical DSM (deep-sub-micron) process, we show that when standard distributed RC models are used and inductive effects and routing orientation are ignored, large errors can occur in the prediction and evaluation of the crosstalk voltage: the discrepancy rates can reach a mean value of 23% for the same direction and 52% for the opposite direction for the near-end crosstalk and 44% for the same direction and 39% for the opposite direction for the far-end crosstalk. The routing orientation can lead to a mean difference of 35% for the near-end crosstalk and 24% for the far-end crosstalk.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2004.1434241","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Rapid progress in integrated circuit technology has led to an increase in the switching speed of the digital chip. As a result, there is a growing interest in the inductance associated with signal lines. In this paper, we show the influence of inductance and routing orientation on crosstalk voltage by considering two configurations of parallel coupled interconnects, one with both drivers on the same side, and the other with the drivers in opposite directions. For a typical DSM (deep-sub-micron) process, we show that when standard distributed RC models are used and inductive effects and routing orientation are ignored, large errors can occur in the prediction and evaluation of the crosstalk voltage: the discrepancy rates can reach a mean value of 23% for the same direction and 52% for the opposite direction for the near-end crosstalk and 44% for the same direction and 39% for the opposite direction for the far-end crosstalk. The routing orientation can lead to a mean difference of 35% for the near-end crosstalk and 24% for the far-end crosstalk.
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串扰评价:电感和布线方向的影响
集成电路技术的飞速发展使得数字芯片的开关速度不断提高。因此,人们对与信号线相关的电感越来越感兴趣。本文通过考虑两种并联耦合互连的配置,一种是两个驱动器在同一侧,另一种是驱动器在相反方向,展示了电感和布线方向对串扰电压的影响。对于典型的DSM(深亚微米)过程,我们表明,当使用标准的分布式RC模型,忽略感应效应和布线方向时,串扰电压的预测和评估可能会出现很大的误差:近端串扰在同一方向上的偏差率达到23%,相反方向上的偏差率达到52%,远端串扰在相同方向上的偏差率达到44%,相反方向上的偏差率达到39%。路由方向对近端串扰的平均差异为35%,对远端串扰的平均差异为24%。
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