Y. Denis, F. Monsieur, G. Ghibaudo, J. Mazurier, E. Josse, D. Rideau, C. Charbuillet, C. Tavernier, H. Jaouen
{"title":"New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology","authors":"Y. Denis, F. Monsieur, G. Ghibaudo, J. Mazurier, E. Josse, D. Rideau, C. Charbuillet, C. Tavernier, H. Jaouen","doi":"10.1109/ICMTS.2015.7106109","DOIUrl":null,"url":null,"abstract":"This paper provides a compact model for performance and process variability assessment in 14nm FDSOI CMOS technology. It is used to investigate MOS performance relation with process parameters. Then production device within wafer variability has been modeled using backward propagation of variance (BPV). This application allows spotting the main model parameter contributing to the total MOS transistor resistance (Ron) variability.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper provides a compact model for performance and process variability assessment in 14nm FDSOI CMOS technology. It is used to investigate MOS performance relation with process parameters. Then production device within wafer variability has been modeled using backward propagation of variance (BPV). This application allows spotting the main model parameter contributing to the total MOS transistor resistance (Ron) variability.