A. Benvenuti, G. Ghione, M. Pinto, W. M. Coughran, N. Schryer
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引用次数: 11
Abstract
We analyzed the self-consistent thermal and electrical behavior of InP-GaInAs heterojunction bipolar transistors (HBTs) with a coupled 1D thermal-fully hydrodynamic model, discretized with an improved upwinding scheme. Taking advantage of the flexibility allowed by our software approach, the role of convective terms and thermal effects is demonstrated by comparison with previous models.<>
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