High voltage capacitive voltage conversion

Randall L. Sandusky, A. Hölke
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引用次数: 2

Abstract

A novel high-voltage, ultra-high efficiency monolithic DC-DC Converter is presented. The disclosed architecture was integrated in the X-Fab XT018 SOI process using lateral Super Junction NMOS devices for up to 400V operation. Buck or boost voltage conversion is realized using high-voltage switched-capacitor and gate-driver techniques enabling efficiencies of > 98% peak efficiency, > 97% from 5% to 100% load. The topology is suitable for many applications including charging systems for cell-phones, tablets or other handheld devices, USB power conversion, AC-DC Adapters, DC-DC Point-of-Load (POL) and IoT applications. Block diagrams, simulated and measured results are presented showing the key features of this architecture, areas of interest and the performance summary.
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高压容性电压转换
提出了一种新型高压、超高效率的单片DC-DC变换器。该架构集成在X-Fab XT018 SOI制程中,采用横向超级结NMOS器件,工作电压高达400V。降压或升压转换使用高压开关电容器和栅极驱动器技术实现,峰值效率> 98%,负载从5%到100%时效率> 97%。该拓扑结构适用于许多应用,包括手机、平板电脑或其他手持设备的充电系统、USB电源转换、AC-DC适配器、DC-DC负载点(POL)和物联网应用。给出了框图、模拟和测量结果,显示了该体系结构的主要特征、感兴趣的领域和性能摘要。
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