{"title":"Thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials prepared by pulse-current hot-pressing","authors":"H. Kitagawa, Y. Shinohara, T. Kitamura, Y. Noda","doi":"10.1109/ICT.2001.979839","DOIUrl":null,"url":null,"abstract":"Hot-press deformation was performed for Bi/sub 2/Te/sub 3/-related samples. The ingots as the source material were grown by the Bridgman method with the nominal compositions of Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ and Bi/sub 2/Te/sub 2.85/Se/sub 0.15/ A disk cut from the ingot was deformed by hot-pressing under pulse-current heating. The crystal structures of the deformed samples were identified by X-ray diffraction. All diffraction peaks were assigned to Bi/sub 2/Te/sub 3/-type structure and the patterns indicate the samples were oriented in the hexagonal (00/spl middot/l) plane. The Hall effect measurements indicate that the carrier concentration of the samples is in the order of magnitude of 10/sup 25/ m/sup -3/ in the temperature range of 80 to 300 K. The power factor after the deformation exceeds those for the source ingots. The results indicate that the hot-press deformation can be expected to enhance thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials.","PeriodicalId":203601,"journal":{"name":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2001.979839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Hot-press deformation was performed for Bi/sub 2/Te/sub 3/-related samples. The ingots as the source material were grown by the Bridgman method with the nominal compositions of Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ and Bi/sub 2/Te/sub 2.85/Se/sub 0.15/ A disk cut from the ingot was deformed by hot-pressing under pulse-current heating. The crystal structures of the deformed samples were identified by X-ray diffraction. All diffraction peaks were assigned to Bi/sub 2/Te/sub 3/-type structure and the patterns indicate the samples were oriented in the hexagonal (00/spl middot/l) plane. The Hall effect measurements indicate that the carrier concentration of the samples is in the order of magnitude of 10/sup 25/ m/sup -3/ in the temperature range of 80 to 300 K. The power factor after the deformation exceeds those for the source ingots. The results indicate that the hot-press deformation can be expected to enhance thermoelectric properties of Bi/sub 2/Te/sub 3/-related materials.
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