Application of New Metal-Oxide Memristor Models in Digital and Analog Electronic Circuits

Abstract

Memristors, as novel nonlinear electronic components are under intensive analyses, owing to their excellent switching and memory properties, low power usage, nano-sizes, and good compatibility to traditional CMOS integrated chips. They are applicable in electronic schemes, incorporated in chips. Engineering of memristor circuits presents opportunities for design of chips with ultra-high density and many applications. In the last years, several modified and enhanced memristor models, built on the frequently used standard models are proposed. They are simplified, with a good accuracy and high operating rate. The aim of this paper is to present the applicability of the enhanced models in electronic schemes and a comparison of their properties and performance in LTSPICE environment. Several schemes, as memory crossbars, logic gates, neural nets, and various reconfigurable circuits are analyzed. The modified memristor models are compared to various standard models, according to different criteria, as operating frequency, precision, simulation time, switching properties and complexity. The major advantages of the improved models are represented – fast operation, good convergence, accuracy, and applicability in complex electronic devices and circuits.