Y. Lai, E. Chang, C. Chang, Don-Gey Liu, M. Her, M. Shiau, S. Yang, K.C. Chuang
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引用次数: 0
Abstract
In this paper, we present GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.
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