Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836398
L. Leung, C. F. Kwong, C. Kwok, S. So
The construction and performance of a series of polymeric guest-host type OLEDs is described. We examine the I-V-L properties of OLED as a function of the device configuration (film thickness, 1-layer vs multi-layer devices, etc.) and of its constituents (composition, use of additives, etc.). Data analysis on the various charge transport regions also shed light onto the overall transport mechanism and critical performance criterion.
{"title":"Polymeric organic light emitting diodes (OLED)","authors":"L. Leung, C. F. Kwong, C. Kwok, S. So","doi":"10.1109/HKEDM.1999.836398","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836398","url":null,"abstract":"The construction and performance of a series of polymeric guest-host type OLEDs is described. We examine the I-V-L properties of OLED as a function of the device configuration (film thickness, 1-layer vs multi-layer devices, etc.) and of its constituents (composition, use of additives, etc.). Data analysis on the various charge transport regions also shed light onto the overall transport mechanism and critical performance criterion.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114659592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836400
E. Wong, S. Man, E. Pun, P. Chung
Rare-earth doped Yb/Er BK-7 glass was fabricated and characterized. The photoluminescence (PL) intensity in these co-doped samples saturates at a Yb/Er ratio of 10, and the intensity increases by /spl sim/10 times compared to that of Er doped samples. The lifetime decreases as the Er concentration increases, for Yb/Er co-doped samples the lifetime is longer. Rare-earth doped glass amplifiers were fabricated by the ion-exchange process, and a net gain of 2.2 dB/cm at a pump power of 110 mW was obtained.
{"title":"Er/sup 3+//Yb/sup 3+/ co-doped BK-7 glass optical amplifier","authors":"E. Wong, S. Man, E. Pun, P. Chung","doi":"10.1109/HKEDM.1999.836400","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836400","url":null,"abstract":"Rare-earth doped Yb/Er BK-7 glass was fabricated and characterized. The photoluminescence (PL) intensity in these co-doped samples saturates at a Yb/Er ratio of 10, and the intensity increases by /spl sim/10 times compared to that of Er doped samples. The lifetime decreases as the Er concentration increases, for Yb/Er co-doped samples the lifetime is longer. Rare-earth doped glass amplifiers were fabricated by the ion-exchange process, and a net gain of 2.2 dB/cm at a pump power of 110 mW was obtained.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126168952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836407
T.V. Prevenslik, F. G. Shin, C. Mak
The current status in the development program of a cavity QED photoelectric cell is reported. The cell comprises a pair of silicon chips interacting with each other by electromagnetic (EM) radiation through a gap of microscopic dimensions. The gap between the interacting surfaces is less than 100 nm and forms a 1D cavity QED confinement with a resonance in the UV below 200 nm. The cell is driven by the collective EM radiation emitted from the silicon surface that is described by the absorption (and emission) spectrum of the silicon surface. The cell voltage depends on the photoelectric effect caused by the difference between Planck energy at UV frequencies and the work function of silicon whereas the photoelectric current depends on the quantum efficiency of the silicon surface. To compensate for the lowering of temperature of the silicon surface caused by the conversion of Planck energy loss at UV frequencies to free electrons, the cell recharges itself from the thermal energy freely available in the ambient surroundings.
{"title":"Cavity QED photoelectric cell","authors":"T.V. Prevenslik, F. G. Shin, C. Mak","doi":"10.1109/HKEDM.1999.836407","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836407","url":null,"abstract":"The current status in the development program of a cavity QED photoelectric cell is reported. The cell comprises a pair of silicon chips interacting with each other by electromagnetic (EM) radiation through a gap of microscopic dimensions. The gap between the interacting surfaces is less than 100 nm and forms a 1D cavity QED confinement with a resonance in the UV below 200 nm. The cell is driven by the collective EM radiation emitted from the silicon surface that is described by the absorption (and emission) spectrum of the silicon surface. The cell voltage depends on the photoelectric effect caused by the difference between Planck energy at UV frequencies and the work function of silicon whereas the photoelectric current depends on the quantum efficiency of the silicon surface. To compensate for the lowering of temperature of the silicon surface caused by the conversion of Planck energy loss at UV frequencies to free electrons, the cell recharges itself from the thermal energy freely available in the ambient surroundings.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127868145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836426
Jinshu Zhang, H. Jia, P. Tsien, T. Lo, Z. Yang, Jie-An Huang, Yihui Wang, Luoguang Huang, C. Liang, M. Feng, Q. Lin
The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 /spl mu/m is 1.7 A/cm.
{"title":"900 MHz 7.4 W SiGe heterojunction bipolar transistor","authors":"Jinshu Zhang, H. Jia, P. Tsien, T. Lo, Z. Yang, Jie-An Huang, Yihui Wang, Luoguang Huang, C. Liang, M. Feng, Q. Lin","doi":"10.1109/HKEDM.1999.836426","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836426","url":null,"abstract":"The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 /spl mu/m is 1.7 A/cm.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124568438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836394
Z.G. Wang, J.B. Liang, Gong Qian, B. Xu
Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized with significant improvements in uniformity of QDs free of defects and increasing QD density. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs QDs grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimization of the growth conditions such as growth temperature, V/III ratio, the amount of InAs, In/sub x/Ga/sub 1-x/As, In/sub x/Al/sub 1-x/As coverage, the composition x, etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10/sup 11/ cm/sup -2/, and the dot size distribution is controlled to be less than 10%. These are very important to obtain a low threshold current density (J/sub th/) of the QD laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the J/sub th/ Of the QD lasers are also described in detail. Thirdly, based on the optimization of the hand engineering design for the QD laser and the structure geometry and growth conditions of QDs, 1 W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix and a larger than 10 W semiconductor laser module consisting of nineteen QD laser diodes is demonstrated. The lifetime of the QD laser with an emitting wavelength around 960 nm and 0.614 W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83 db. This is the best result as we know at the moment. Finally the future trends and perspectives of the QD laser are also discussed.
{"title":"High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers","authors":"Z.G. Wang, J.B. Liang, Gong Qian, B. Xu","doi":"10.1109/HKEDM.1999.836394","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836394","url":null,"abstract":"Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized with significant improvements in uniformity of QDs free of defects and increasing QD density. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs QDs grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimization of the growth conditions such as growth temperature, V/III ratio, the amount of InAs, In/sub x/Ga/sub 1-x/As, In/sub x/Al/sub 1-x/As coverage, the composition x, etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10/sup 11/ cm/sup -2/, and the dot size distribution is controlled to be less than 10%. These are very important to obtain a low threshold current density (J/sub th/) of the QD laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the J/sub th/ Of the QD lasers are also described in detail. Thirdly, based on the optimization of the hand engineering design for the QD laser and the structure geometry and growth conditions of QDs, 1 W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix and a larger than 10 W semiconductor laser module consisting of nineteen QD laser diodes is demonstrated. The lifetime of the QD laser with an emitting wavelength around 960 nm and 0.614 W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83 db. This is the best result as we know at the moment. Finally the future trends and perspectives of the QD laser are also discussed.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114718360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836403
A. Chan, M. Chan, P. Ko
A standard CMP (chemical mechanical polishing) process has been used to reduce surface roughness of a polysilicon thin film. An N-channel TFT has been fabricated on both polished and unpolished polysilicon thin films. Both thin thermally grown and deposited oxides with thickness under 30 nm are used as the gate dielectric. It is founded that a TFT fabricated on polished polysilicon thin film exhibits higher carrier mobility, better sub-threshold swing, lower threshold voltage, higher on/off current ratio as well as better ability to withstand high voltage operation and longer device lifetime. Such improvement should benefit applications which incorporate TFT such as SRAM and LCD display.
{"title":"Improved thin-film transistor (TFT) characteristics on chemical-mechanically polished polycrystalline silicon film","authors":"A. Chan, M. Chan, P. Ko","doi":"10.1109/HKEDM.1999.836403","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836403","url":null,"abstract":"A standard CMP (chemical mechanical polishing) process has been used to reduce surface roughness of a polysilicon thin film. An N-channel TFT has been fabricated on both polished and unpolished polysilicon thin films. Both thin thermally grown and deposited oxides with thickness under 30 nm are used as the gate dielectric. It is founded that a TFT fabricated on polished polysilicon thin film exhibits higher carrier mobility, better sub-threshold swing, lower threshold voltage, higher on/off current ratio as well as better ability to withstand high voltage operation and longer device lifetime. Such improvement should benefit applications which incorporate TFT such as SRAM and LCD display.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130409942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836410
H. Chan
Ferroelectric single crystals, ceramics, polymers and composites can convert changes in mechanical and thermal energies into electrical signals as well as exhibiting the converse effect. This dual functional ability enables them to sense changes in their environment and actuate a desired response, which allow them to be regarded as smart (or intelligent) materials. The present paper reviews the piezoelectric and pyroelectric properties, poling behavior and transducer properties of selected numbers of ferroelectric materials studied in our laboratory. These include PMN-PT single crystals, ceramic/polymer 1-3 composites, 0-3 nanocomposites and ferroelectric films prepared by various methods. The uses of these materials in sensor and mechatronic device applications are also discussed.
{"title":"Smart ferroelectric materials for sensors and mechatronic device applications","authors":"H. Chan","doi":"10.1109/HKEDM.1999.836410","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836410","url":null,"abstract":"Ferroelectric single crystals, ceramics, polymers and composites can convert changes in mechanical and thermal energies into electrical signals as well as exhibiting the converse effect. This dual functional ability enables them to sense changes in their environment and actuate a desired response, which allow them to be regarded as smart (or intelligent) materials. The present paper reviews the piezoelectric and pyroelectric properties, poling behavior and transducer properties of selected numbers of ferroelectric materials studied in our laboratory. These include PMN-PT single crystals, ceramic/polymer 1-3 composites, 0-3 nanocomposites and ferroelectric films prepared by various methods. The uses of these materials in sensor and mechatronic device applications are also discussed.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125542647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836416
Chee Chenjie, Liu Litian, T. Zhimin, Xie Huikai, L. Zhijian
A simple fabrication process of wobble motors with a bearing anchored on a substrate by polysilicon has been developed. This process makes use of two LPCVD polysilicons, two LPCVD sacrificial layers SiO/sub 2/ and four photolithography steps. The rotor, stators and rotor/stator gap pattern definition is the first photolithography step and is performed over a flat surface. The rotor is in electrically contacts with the silicon substrate through the bearing. The rotor and the substrate is at the same electric potential, therefore rotor clamped is eliminated. The polysilicon which anchors the flange of micromotor is used stead of the SiO/sub 2/, the over etch time does not affect flange anchored on the substrate during release motor. The time releasing the motor is easily controlled. For 2.5 /spl mu/m-thick rotor/stater polysilicon films, minimum starting voltage 45 V, minimum operating voltage 25 V across 2.2 /spl mu/m rotor/stater gaps; maximum rotate velocity of the motor is 600 rpm, and varied with the exciting frequency continually.
{"title":"Fabrication process of wobble motors with polysilicon anchoring bearing","authors":"Chee Chenjie, Liu Litian, T. Zhimin, Xie Huikai, L. Zhijian","doi":"10.1109/HKEDM.1999.836416","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836416","url":null,"abstract":"A simple fabrication process of wobble motors with a bearing anchored on a substrate by polysilicon has been developed. This process makes use of two LPCVD polysilicons, two LPCVD sacrificial layers SiO/sub 2/ and four photolithography steps. The rotor, stators and rotor/stator gap pattern definition is the first photolithography step and is performed over a flat surface. The rotor is in electrically contacts with the silicon substrate through the bearing. The rotor and the substrate is at the same electric potential, therefore rotor clamped is eliminated. The polysilicon which anchors the flange of micromotor is used stead of the SiO/sub 2/, the over etch time does not affect flange anchored on the substrate during release motor. The time releasing the motor is easily controlled. For 2.5 /spl mu/m-thick rotor/stater polysilicon films, minimum starting voltage 45 V, minimum operating voltage 25 V across 2.2 /spl mu/m rotor/stater gaps; maximum rotate velocity of the motor is 600 rpm, and varied with the exciting frequency continually.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122163443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836408
Y. Morokov, V. Gritsenko, Yu. N. Novikov, J.B. Xu, L. Lau, R. Kwok
The goal of present work is to understand the nature of the main traps in gate SiO/sub x/N/sub y/ with the quantum-chemical simulation (MINDO/3). We used the cluster approximation and have studied the electronic structure of the clusters taking onto account the atomic relaxation in different charge states of defects. To simulate the effect of chemical composition on the capturing properties of the /spl equiv/Si/sub 2/N/spl middot/ defect in silicon oxynitride clusters with different numbers of oxygen and nitrogen atoms in the second co-ordination sphere were considered. For simulation of the Si/sub 3/N/sub 4/ bulk electronic structure we used the Si/sub 20/N/sub 28/H/sub 36/ cluster.
{"title":"Nature of traps in gate silicon oxynitride of MOS devices","authors":"Y. Morokov, V. Gritsenko, Yu. N. Novikov, J.B. Xu, L. Lau, R. Kwok","doi":"10.1109/HKEDM.1999.836408","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836408","url":null,"abstract":"The goal of present work is to understand the nature of the main traps in gate SiO/sub x/N/sub y/ with the quantum-chemical simulation (MINDO/3). We used the cluster approximation and have studied the electronic structure of the clusters taking onto account the atomic relaxation in different charge states of defects. To simulate the effect of chemical composition on the capturing properties of the /spl equiv/Si/sub 2/N/spl middot/ defect in silicon oxynitride clusters with different numbers of oxygen and nitrogen atoms in the second co-ordination sphere were considered. For simulation of the Si/sub 3/N/sub 4/ bulk electronic structure we used the Si/sub 20/N/sub 28/H/sub 36/ cluster.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123801534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836404
S. Oussalah, F. Nebel
In this work, we investigate the reliability of SiO/sub 2/ films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under constant current injection. Assuming that the logarithm of the median-time-to-failure, In(t/sub 50/), is described by a linear electric field dependence. A generalized law for the long-term reliability of the dielectric, taking into account the applied electric field and the dielectric thickness, is proposed.
{"title":"On the oxide thickness dependence of the time-dependent-dielectric-breakdown","authors":"S. Oussalah, F. Nebel","doi":"10.1109/HKEDM.1999.836404","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836404","url":null,"abstract":"In this work, we investigate the reliability of SiO/sub 2/ films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under constant current injection. Assuming that the logarithm of the median-time-to-failure, In(t/sub 50/), is described by a linear electric field dependence. A generalized law for the long-term reliability of the dielectric, taking into account the applied electric field and the dielectric thickness, is proposed.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131557863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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