H. Mizuta, D. Williams, K. Katayama, H. Muller, K. Nakazato, H. Ahmed
{"title":"High-speed single-electron memory: cell design and architecture","authors":"H. Mizuta, D. Williams, K. Katayama, H. Muller, K. Nakazato, H. Ahmed","doi":"10.1109/LDS.1998.714536","DOIUrl":null,"url":null,"abstract":"A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LDS.1998.714536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec.
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