We present our recent results on exciton-polariton photonics in microcavities with embedded quantum wells (QWs) and in quantum-dot (QD) lattices. Quantum transport in nanostructures based on QWs and QDs will be discussed as well.
{"title":"Quantum wells and quantum dots for photonics and electronics: Fundamentals and applications","authors":"M. Willander, E. L. Ivchenko, Y. Fu","doi":"10.1109/LDS.1998.713842","DOIUrl":"https://doi.org/10.1109/LDS.1998.713842","url":null,"abstract":"We present our recent results on exciton-polariton photonics in microcavities with embedded quantum wells (QWs) and in quantum-dot (QD) lattices. Quantum transport in nanostructures based on QWs and QDs will be discussed as well.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115979518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.
{"title":"Electron electron interaction and classical mesoscopic phenomena in semiconductors","authors":"S. Luryi","doi":"10.1109/LDS.1998.714528","DOIUrl":"https://doi.org/10.1109/LDS.1998.714528","url":null,"abstract":"I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122351897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Wakaya, F. Yoshioka, H. Higurashi, S. Iwabuchi, Y. Nagaoka, K. Gamo
Single-electron-tunneling device with variable environmental impedance (Z-SET) is considered. It is numerically shown that resistive environmental impedance can control the Coulomb gap and capacitive environmental impedance degrade the controllability of Z-SET. It is experimentally observed that the Coulomb gap becomes large as the negative gate voltages to control the environmental resistance becomes large. In order to consider the origin of the observed enlargement of the Coulomb gap. The effect of environmental impedance on the shape of the Coulomb diamond is also discussed.
{"title":"Controllability of single electron tunneling and change in Coulomb diamond caused by environmental impedance modulation","authors":"F. Wakaya, F. Yoshioka, H. Higurashi, S. Iwabuchi, Y. Nagaoka, K. Gamo","doi":"10.1109/LDS.1998.714541","DOIUrl":"https://doi.org/10.1109/LDS.1998.714541","url":null,"abstract":"Single-electron-tunneling device with variable environmental impedance (Z-SET) is considered. It is numerically shown that resistive environmental impedance can control the Coulomb gap and capacitive environmental impedance degrade the controllability of Z-SET. It is experimentally observed that the Coulomb gap becomes large as the negative gate voltages to control the environmental resistance becomes large. In order to consider the origin of the observed enlargement of the Coulomb gap. The effect of environmental impedance on the shape of the Coulomb diamond is also discussed.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114379763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper provides an extended summary of several new approaches to infrared and terahertz generation. First the issues and the state of the arts are outlined, and then ideas of new approaches and devices are introduced. References are cited for details.
{"title":"New approaches to infrared and terahertz generation","authors":"H. Liu","doi":"10.1109/LDS.1998.714529","DOIUrl":"https://doi.org/10.1109/LDS.1998.714529","url":null,"abstract":"This paper provides an extended summary of several new approaches to infrared and terahertz generation. First the issues and the state of the arts are outlined, and then ideas of new approaches and devices are introduced. References are cited for details.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130832952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The electron subband energy and population engineering by inserting a thin AlGaAs barrier inside a GaAs quantum well (QW) is considered. The specific voltage across the coupled QW's which arises due to the asymmetric deformation of electron wave function is calculated. The simplified analytical model for confined and interface polar optical phonons in the double barrier GaAs QW with inserted AlGaAs barrier is described. The electron-polar optical phonon scattering rates, the electron mobility and the photoexcited electron subband population as functions of the position of the AlGaAs barrier in the asymmetric coupled QW's are considered.
{"title":"Electron subband population and mobility in asymmetric coupled quantum wells","authors":"J. Požela, K. Požėla, V. Jucienė, A. Namajunas","doi":"10.1109/LDS.1998.714530","DOIUrl":"https://doi.org/10.1109/LDS.1998.714530","url":null,"abstract":"The electron subband energy and population engineering by inserting a thin AlGaAs barrier inside a GaAs quantum well (QW) is considered. The specific voltage across the coupled QW's which arises due to the asymmetric deformation of electron wave function is calculated. The simplified analytical model for confined and interface polar optical phonons in the double barrier GaAs QW with inserted AlGaAs barrier is described. The electron-polar optical phonon scattering rates, the electron mobility and the photoexcited electron subband population as functions of the position of the AlGaAs barrier in the asymmetric coupled QW's are considered.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130930379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Mizuta, D. Williams, K. Katayama, H. Muller, K. Nakazato, H. Ahmed
A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec.
{"title":"High-speed single-electron memory: cell design and architecture","authors":"H. Mizuta, D. Williams, K. Katayama, H. Muller, K. Nakazato, H. Ahmed","doi":"10.1109/LDS.1998.714536","DOIUrl":"https://doi.org/10.1109/LDS.1998.714536","url":null,"abstract":"A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123292722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Ferry, R. Akis, J. P. Bird, D. Pivin, N. Holmberg, F. Badrieh, D. Vasileska
There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.
{"title":"Modeling quantum transport in semiconductor nanostructures","authors":"D. Ferry, R. Akis, J. P. Bird, D. Pivin, N. Holmberg, F. Badrieh, D. Vasileska","doi":"10.1109/LDS.1998.714534","DOIUrl":"https://doi.org/10.1109/LDS.1998.714534","url":null,"abstract":"There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129577147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the calculated transient photocurrent is used to obtain the frequency dependent responsivity. It is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model.
{"title":"Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes","authors":"M. Ryzhii, M. Willander, I. Khmyrova, V. Ryzhii","doi":"10.1109/LDS.1998.714533","DOIUrl":"https://doi.org/10.1109/LDS.1998.714533","url":null,"abstract":"We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the calculated transient photocurrent is used to obtain the frequency dependent responsivity. It is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128646068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
By using InP-based RTD/HEMT integration technology, we fabricated ultrahigh-speed resonant-tunneling circuits, i.e., ternary and quaternary quantizers. The quantizing operation at room temperature was confirmed at a clock frequency of 10 GHz for input frequencies as high as 4.7 GHz. SPICE simulation proved that a 4-bit flash-type analog-to-digital converter which consists of the quaternary quantizers, can operate at a sampling frequency of 10 GHz.
{"title":"Ultrahigh-speed resonant tunneling circuits","authors":"T. Waho, T. Itoh, M. Yamamoto","doi":"10.1109/LDS.1998.714537","DOIUrl":"https://doi.org/10.1109/LDS.1998.714537","url":null,"abstract":"By using InP-based RTD/HEMT integration technology, we fabricated ultrahigh-speed resonant-tunneling circuits, i.e., ternary and quaternary quantizers. The quantizing operation at room temperature was confirmed at a clock frequency of 10 GHz for input frequencies as high as 4.7 GHz. SPICE simulation proved that a 4-bit flash-type analog-to-digital converter which consists of the quaternary quantizers, can operate at a sampling frequency of 10 GHz.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116897659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lateral hot-electron transistors (LHETs) attracts great attention as a possible basis for high frequency (HF) microelectronics. In contrast to previous work the excitation of plasma waves with a linear dispersion law in the LHET base is taken into account. It is shown that plasma effects can play an important role in LHET operation. We propose to induce plasma waves in the base of LHET by the input a.c. voltage. The resonant behaviour of transistor parameters allows us to call it as Resonant Lateral Hot electron Transistor (RLHET). By generalizing Dyakonov-Shur approach we succeeded to obtain analytical expression for LHET transconductance accounting plasma oscillations. It is shown that the emitter current of such a device has a resonant response to the applied HF base voltage determined by the standing plasma waves resonances of 2DEG in the base, which can be in the terahertz range, depending on the base length. The resonant transconductance can significantly exceed its steady state value. This device can be used both for the experimental study of 2DEG parameters and as a selective, tunable HF amplifier.
{"title":"Plasma waves excitation in the base of lateral hot electron transistor","authors":"Leonid Fedichkin, V. Ryzhii, M. Willander","doi":"10.1109/LDS.1998.714539","DOIUrl":"https://doi.org/10.1109/LDS.1998.714539","url":null,"abstract":"Lateral hot-electron transistors (LHETs) attracts great attention as a possible basis for high frequency (HF) microelectronics. In contrast to previous work the excitation of plasma waves with a linear dispersion law in the LHET base is taken into account. It is shown that plasma effects can play an important role in LHET operation. We propose to induce plasma waves in the base of LHET by the input a.c. voltage. The resonant behaviour of transistor parameters allows us to call it as Resonant Lateral Hot electron Transistor (RLHET). By generalizing Dyakonov-Shur approach we succeeded to obtain analytical expression for LHET transconductance accounting plasma oscillations. It is shown that the emitter current of such a device has a resonant response to the applied HF base voltage determined by the standing plasma waves resonances of 2DEG in the base, which can be in the terahertz range, depending on the base length. The resonant transconductance can significantly exceed its steady state value. This device can be used both for the experimental study of 2DEG parameters and as a selective, tunable HF amplifier.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"302 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127372672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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