X. Federspiel, D. Angot, M. Rafik, F. Cacho, A. Bajolet, N. Planes, D. Roy, M. Haond, F. Arnaud
{"title":"28nm node bulk vs FDSOI reliability comparison","authors":"X. Federspiel, D. Angot, M. Rafik, F. Cacho, A. Bajolet, N. Planes, D. Roy, M. Haond, F. Arnaud","doi":"10.1109/IRPS.2012.6241805","DOIUrl":null,"url":null,"abstract":"In this paper, we present TDDB, HCI and BTI reliability characterization of Nfet and Pfet devices issued from FDSOI and bulk 28nm technologies. 28nm FDSOI devices achieve 32% improved performance, 40% reduced power consumption and improved matching. From device level tests, 28nm FDSOI also demonstrates intrinsic reliability behavior similar to 28 bulk devices, giving confidence in the robustness of this technology.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 37
Abstract
In this paper, we present TDDB, HCI and BTI reliability characterization of Nfet and Pfet devices issued from FDSOI and bulk 28nm technologies. 28nm FDSOI devices achieve 32% improved performance, 40% reduced power consumption and improved matching. From device level tests, 28nm FDSOI also demonstrates intrinsic reliability behavior similar to 28 bulk devices, giving confidence in the robustness of this technology.
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