Nature of the electronic states in random dimer AlxGa1−xAs superlattices

S. Bentata
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Abstract

We study the nature of the electronic states in one-dimensional disordered superlattices. We examine analytically and numerically the effects of short-range correlated disorder in Random Dimer Barrier Superlattices (RDBSL)[1–4]. The conductance and the localization length are statistically computed within an average procedure by means transfer matrix formalism to discriminate the nature of the electronic states in the miniband structure. We consider AlxGa1−xAs layers having identical thickness where the (Al) molar fraction x takes at random two different values with the constraint that one of them appears only in pairs, thus forming a RDBSL. We demonstrate that the superlattice supports two types of delocalized states; one of them comes from resonance effects at dimer barriers, while the other type is due to the commuting nature of the transfer matrices describing the system at certain energies. The states close to the resonance can be viewed as consisting of extended states. In the band tails, i.e. for vanishing conductance, the states are strongly localized.
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随机二聚体AlxGa1−xAs超晶格中电子态的性质
研究了一维无序超晶格中电子态的性质。我们分析和数值研究了随机二聚体势垒超晶格(RDBSL)中短程相关无序的影响[1-4]。利用传递矩阵的形式,在平均过程中统计计算电导和局域化长度,以区分微带结构中电子态的性质。我们考虑具有相同厚度的AlxGa1−xAs层,其中(Al)摩尔分数x随机取两个不同的值,其中一个仅成对出现,从而形成RDBSL。我们证明了超晶格支持两种类型的离域态;其中一种来自二聚体势垒处的共振效应,而另一种类型是由于描述系统在一定能量下的传递矩阵的交换性质。接近共振的态可以看作是由扩展态组成的。在带尾,即电导消失时,态是强局域化的。
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