K. Akahane, N. Yamamoto, S. Gozu, A. Ueta, M. Tsuchiya
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引用次数: 0
Abstract
We fabricated AlGaSb/AlSb-distributed Bragg reflectors (DBRs) on Si(001) substrates. The use of an AlSb initiation layer enabled us to fabricate high-quality AlGaSb/AlSb films on the Si substrates. A well-defined AlGaSb/AlSb-DBR structure was observed using a scanning electron microscope. A stop band of 100 nm centered at 1500 nm was observed using a Fourier transform infrared spectrometer
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