A 8.1 mW 0.1∼2 GHz inductorless CMOS LNTA for software-defined radio applications

Benqing Guo, Jun Chen, Yao Wang, Haiyan Jin, G. Wen
{"title":"A 8.1 mW 0.1∼2 GHz inductorless CMOS LNTA for software-defined radio applications","authors":"Benqing Guo, Jun Chen, Yao Wang, Haiyan Jin, G. Wen","doi":"10.1109/ASICON.2015.7517118","DOIUrl":null,"url":null,"abstract":"A wideband inductorless LNTA is proposed in this paper. The active shunt feedback schematic ensures a wideband input matching while the noise cancellation configuration enables a small NF. The adopted current mirror load operating the LNTA in current mode alleviates the NF deterioration under blocker interference and maintains acceptable linearity as well. Simulations in 0.18-μm CMOS technology show that the proposed LNTA achieves a minimum NF of 2 dB, and a maximum transconductance of 92 mS from 0.1 to 2 GHz. A P1dB of -7.5 dBm and an IIP3 of -0.6 dBm are obtained, respectively. The circuit draws only 4.5 mA from a 1.8 V supply.","PeriodicalId":382098,"journal":{"name":"International Conference on ASIC","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2015.7517118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A wideband inductorless LNTA is proposed in this paper. The active shunt feedback schematic ensures a wideband input matching while the noise cancellation configuration enables a small NF. The adopted current mirror load operating the LNTA in current mode alleviates the NF deterioration under blocker interference and maintains acceptable linearity as well. Simulations in 0.18-μm CMOS technology show that the proposed LNTA achieves a minimum NF of 2 dB, and a maximum transconductance of 92 mS from 0.1 to 2 GHz. A P1dB of -7.5 dBm and an IIP3 of -0.6 dBm are obtained, respectively. The circuit draws only 4.5 mA from a 1.8 V supply.
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用于软件定义无线电应用的8.1 mW 0.1 ~ 2 GHz无电感CMOS LNTA
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