A low voltage SRAM sense amplifier with offset cancelling using digitized multiple body biasing

Bingyan Liu, Yong Hei
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引用次数: 5

Abstract

An offset cancelling technique with digitized multiple body biasing (DMBB) has been proposed. In this scheme, transistors threshold voltage mismatch in latch type sense amplifier (SA) is compensated by adjusting the body bias voltage digitally and repeatedly. Simulated results in 130-nm CMOS technology show that the proposed calibration technique can reduce the standard deviation of offset voltage by over 4X comparing to conventional sense amplifier. In addition, this calibration technique only introduces a little area overhead and some calibration clocks.
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一种采用数字化多体偏置进行偏置抵消的低压SRAM感测放大器
提出了一种基于数字化多体偏置(DMBB)的偏移抵消技术。在该方案中,锁存式感测放大器(SA)的晶体管阈值电压失配通过数字和重复调节本体偏置电压来补偿。在130纳米CMOS技术上的仿真结果表明,与传统感测放大器相比,该校准技术可将失调电压的标准差降低4倍以上。此外,这种校准技术只引入了少量的面积开销和一些校准时钟。
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Keynote speech: Data converters for mobile and autonomous applications A low voltage SRAM sense amplifier with offset cancelling using digitized multiple body biasing A high PSR SOI current-mode bandgap reference Comparison of decoupling resistors and capacitors for increasing the single event upset resistance of SRAM cells A simulation analysis of back gate effects for FDSOI devices
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