J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser
{"title":"Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI variability","authors":"J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser","doi":"10.1109/IIRW.2013.6804161","DOIUrl":null,"url":null,"abstract":"We report statistical NBTI datasets of nanoscale Si/SiON pMOSFETs. Weibull-distributed single-defect-induced ΔV<sub>th</sub> are observed in the NBTI relaxation transients, in contrast with literature reports of exponential distribution. We discuss the (ir)relevance of a correct description of the single-defect-induced ΔV<sub>th</sub> steps for describing the total BTI induced ΔV<sub>th</sub> distribution. We show that the BTI induced V<sub>th</sub> variance can be correctly predicted based on time-zero V<sub>th0</sub>-variability only.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
We report statistical NBTI datasets of nanoscale Si/SiON pMOSFETs. Weibull-distributed single-defect-induced ΔVth are observed in the NBTI relaxation transients, in contrast with literature reports of exponential distribution. We discuss the (ir)relevance of a correct description of the single-defect-induced ΔVth steps for describing the total BTI induced ΔVth distribution. We show that the BTI induced Vth variance can be correctly predicted based on time-zero Vth0-variability only.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
