A New 100A, 500V Power MOSFET Module with Un-Precedented di/dt, dv/dt Endurance

S. Mori, G. Majumdar, Yasuo Kamitani, H. Iwamoto
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Abstract

A new 100A, 500V n-channel enhancement mode power MOSFET module is introduced in this paper. In the introduction an overview on the existing devices has been given. The nunerous merits of the new device are illustrated by means of various static and dynamic characteristics. The classic problem of intrinsic bipolar action, which leads to destruction of power MOSFET have been discussed. The new device has shown a very high level of ruggednes against di/dt, dv/dt stress besides low on-resistance, fast switching speed and other superior characteristics.
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新型100A, 500V功率MOSFET模块,具有前所未有的di/dt, dv/dt耐力
介绍了一种新型100A、500V n沟道增强型功率MOSFET模块。在引言部分对现有设备进行了概述。通过各种静态和动态特性说明了这种新装置的诸多优点。讨论了导致功率MOSFET破坏的固有双极作用的经典问题。除了低导通电阻、快速开关速度和其他优越特性外,新器件还显示出非常高的抗di/dt、dv/dt应力的坚固性。
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