{"title":"8-12GHz VCO with SiGe Heterojunction Bipolar Transistor","authors":"A. Gruhle, H. Kibbel, R. Speck","doi":"10.1109/EUMA.1994.337284","DOIUrl":null,"url":null,"abstract":"A hybrid 8-12 GHz VCO has been built using a SiGe heterojunction bipolar transistor (HBT) in common-emitter-configuration. In order to achieve the wide frequency range only lumped elements were used. Transistors and varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The chosen doping profile resulted in a linear dependence of the output frequency on the varactor voltage.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 24th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1994.337284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A hybrid 8-12 GHz VCO has been built using a SiGe heterojunction bipolar transistor (HBT) in common-emitter-configuration. In order to achieve the wide frequency range only lumped elements were used. Transistors and varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The chosen doping profile resulted in a linear dependence of the output frequency on the varactor voltage.
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