A 50 Gb/s NRZ Optical Modulator Driver Circuit in 0.18 μm SiGe BiCMOS Technology

Meng-Yi Lin, Jau‐Ji Jou, Chien-Liang Chiu, Chih-Yuan Lien, Bing-Hong Liu
{"title":"A 50 Gb/s NRZ Optical Modulator Driver Circuit in 0.18 μm SiGe BiCMOS Technology","authors":"Meng-Yi Lin, Jau‐Ji Jou, Chien-Liang Chiu, Chih-Yuan Lien, Bing-Hong Liu","doi":"10.1109/ICASI57738.2023.10179524","DOIUrl":null,"url":null,"abstract":"Herein, we propose a 50 Gb/s non-return-to-zero optical modulator driver circuit in 0.18 μm SiGe BiCMOS technology. This modulator driver circuit including a pre-driver and a main driver was designed as a full-differential circuit. For the driver circuit, the bandwidth is 28.4 GHz, the voltage gain is 12.1 dB, the maximum differential output swing is 2 Vppd, and the chip area is 1.064➨1.067 mm2. The driver circuit can be applied in a high-speed micro-ring modulator with low driving voltage.","PeriodicalId":281254,"journal":{"name":"2023 9th International Conference on Applied System Innovation (ICASI)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 9th International Conference on Applied System Innovation (ICASI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASI57738.2023.10179524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Herein, we propose a 50 Gb/s non-return-to-zero optical modulator driver circuit in 0.18 μm SiGe BiCMOS technology. This modulator driver circuit including a pre-driver and a main driver was designed as a full-differential circuit. For the driver circuit, the bandwidth is 28.4 GHz, the voltage gain is 12.1 dB, the maximum differential output swing is 2 Vppd, and the chip area is 1.064➨1.067 mm2. The driver circuit can be applied in a high-speed micro-ring modulator with low driving voltage.
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基于0.18 μm SiGe BiCMOS技术的50gb /s NRZ光调制器驱动电路
在此,我们提出了一个50gb /s的不归零光调制器驱动电路在0.18 μm SiGe BiCMOS技术。该调制器驱动电路包括前置驱动器和主驱动器,设计为全差分电路。驱动电路带宽为28.4 GHz,电压增益为12.1 dB,最大差分输出摆幅为2 Vppd,芯片面积为1.064 1.067 mm2。该驱动电路可应用于低驱动电压的高速微环调制器中。
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