J. Matsui, H. Takahashi, N. Xie, J. Mizuno, K. Utaka
{"title":"Fabrication of silicon mold for thermal Nanoimprint Lithography","authors":"J. Matsui, H. Takahashi, N. Xie, J. Mizuno, K. Utaka","doi":"10.1109/INOW.2008.4634540","DOIUrl":null,"url":null,"abstract":"We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness.