K. A. Mat-Sharif, M. I. Zulkifli, S. Z. Muhamad-Yassin, N. Tamchek, S. M. Aljamimi, A. Yusoff, Y. M. Amin, S. Shafiqah, H. Abdul-Rashid
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引用次数: 7
Abstract
Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica.
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