A 275GHz to 296GHz Power Amplifier Using Embedding Network in 65nm-CMOS with 29.4dB Peak Power Gain

Jianguo Yu, Zhiyao Wang
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Abstract

This paper reports the design and simulation of 275GHz to 296GHz power amplifier employing embedding linear lossless reciprocity (LLR) network to boost maximum available gain to maximum achievable gain in 65nm CMOS process. The LLR network is realized by an inductor between the gate and drain of the transistor. The final simulation results show that the gain is greater than lOdB from 275GHz to 296GHz, and reaches a 29.4dB peak at 275GHz. And at 275GHz, saturated output power is -ldBm, IdB compression point of output power is -3.5dBm.
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基于嵌入网络的65nm cmos 275GHz至296GHz功率放大器,峰值功率增益29.4dB
本文报道了采用嵌入式线性无损互易(LLR)网络将65nm CMOS工艺的最大可用增益提升到最大可实现增益的275GHz至296GHz功率放大器的设计与仿真。LLR网络是通过晶体管栅极和漏极之间的电感来实现的。最终仿真结果表明,在275GHz ~ 296GHz范围内,增益大于lOdB,在275GHz时达到29.4dB峰值。在275GHz时,饱和输出功率为-ldBm,输出功率的IdB压缩点为-3.5dBm。
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