M. Fujii, T. Maeda, Y. Ohno, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida
{"title":"An ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage","authors":"M. Fujii, T. Maeda, Y. Ohno, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida","doi":"10.1109/GAAS.1994.636917","DOIUrl":null,"url":null,"abstract":"SCFL D-FFs with supply voltage as low as 1.3 V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 /spl mu/m AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"133 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636917","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
SCFL D-FFs with supply voltage as low as 1.3 V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 /spl mu/m AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.
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