Challenges in LER/CDU metrology in DSA: placement error and cross-line correlations

V. Constantoudis, V. Kuppuswamy, E. Gogolides, A. V. Pret, H. Pathangi, R. Gronheid
{"title":"Challenges in LER/CDU metrology in DSA: placement error and cross-line correlations","authors":"V. Constantoudis, V. Kuppuswamy, E. Gogolides, A. V. Pret, H. Pathangi, R. Gronheid","doi":"10.1117/12.2230849","DOIUrl":null,"url":null,"abstract":"DSA lithography poses new challenges in LER/LWR metrology due to its self-organized and pitch-based nature. To cope with these challenges, a novel characterization approach with new metrics and updating the older ones is required. To this end, we focus on two specific challenges of DSA line patterns: a) the large correlations between the left and right edges of a line (line wiggling, rms(LWR)<rms(LER)) and b) the cross-line correlations, i.e. the resemblance of wiggling fluctuations of nearby lines. The first is quantified by the Line Center Roughness whose low-frequency part is related to the local placement errors of device structures. For the second, we propose the c-factor correlation function which quantifies the strength of the correlations between lines versus their horizontal distance in pitches. Also, we define roughness and uniformity parameters for the pitch changes along and across lines. The proposed characterization approach is applied to the analysis of line/space patterns obtained with the Liu-Nealey (LiNe) flow (post PMMA removal and pattern transfer) revealing the effects of pattern transfer on roughness and uniformity. Finally, we calculate the cfactor function of various Next-Generation Lithography techniques and reveal their distinct footprint on the extent of cross-line correlations.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"19 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2230849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

DSA lithography poses new challenges in LER/LWR metrology due to its self-organized and pitch-based nature. To cope with these challenges, a novel characterization approach with new metrics and updating the older ones is required. To this end, we focus on two specific challenges of DSA line patterns: a) the large correlations between the left and right edges of a line (line wiggling, rms(LWR)
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DSA中LER/CDU计量的挑战:放置误差和跨线相关性
DSA光刻由于其自组织和基于节距的特性,对LER/LWR计量提出了新的挑战。为了应对这些挑战,需要一种具有新指标和更新旧指标的新颖表征方法。为此,我们关注DSA线模式的两个具体挑战:a)线的左右边缘之间的大相关性(线摆动,rms(LWR)
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