Theoretical Prediction of Antiferromagnetic Skyrmion Crystal in Janus Monolayer CrSi2N2As2

IF 15.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY ACS Nano Pub Date : 2022-11-30 DOI:10.1021/acsnano.2c08544
Kaiying Dou, Wenhui Du, Zhonglin He, Ying Dai*, Baibiao Huang and Yandong Ma*, 
{"title":"Theoretical Prediction of Antiferromagnetic Skyrmion Crystal in Janus Monolayer CrSi2N2As2","authors":"Kaiying Dou,&nbsp;Wenhui Du,&nbsp;Zhonglin He,&nbsp;Ying Dai*,&nbsp;Baibiao Huang and Yandong Ma*,&nbsp;","doi":"10.1021/acsnano.2c08544","DOIUrl":null,"url":null,"abstract":"<p >An antiferromagnetic skyrmion crystal (AF-SkX), a regular array of antiferromagnetic skyrmions, is a fundamental phenomenon in the field of condensed-matter physics. So far, very few proposals have been made to realize the AF-SkX, and most have been based on three-dimensional (3D) materials. Herein, using first-principles calculations and Monte Carlo simulations, we report the identification of AF-SkX in a two-dimensional lattice of the Janus monolayer CrSi<sub>2</sub>N<sub>2</sub>As<sub>2</sub>. Arising from the broken inversion symmetry and strong spin–orbit coupling, a large Dzyaloshinskii–Moriya interaction is obtained in the Janus monolayer CrSi<sub>2</sub>N<sub>2</sub>As<sub>2</sub>. This, combined with the geometric frustration of its triangular lattice, gives rise to the skyrmion physics and long-sought AF-SkX in the presence of an external magnetic field. More intriguingly, this system presents two different antiferromagnetic skyrmion phases, and such a phenomenon is distinct from those reported in 3D systems. Furthermore, by contacting with Sc<sub>2</sub>CO<sub>2</sub>, the creation and annihilation of AF-SkX in Janus monolayer CrSi<sub>2</sub>N<sub>2</sub>As<sub>2</sub> can be achieved through ferroelectricity. These findings greatly enrich the research on antiferromagnetic skyrmions.</p>","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"17 2","pages":"1144–1152"},"PeriodicalIF":15.8000,"publicationDate":"2022-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Nano","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsnano.2c08544","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 8

Abstract

An antiferromagnetic skyrmion crystal (AF-SkX), a regular array of antiferromagnetic skyrmions, is a fundamental phenomenon in the field of condensed-matter physics. So far, very few proposals have been made to realize the AF-SkX, and most have been based on three-dimensional (3D) materials. Herein, using first-principles calculations and Monte Carlo simulations, we report the identification of AF-SkX in a two-dimensional lattice of the Janus monolayer CrSi2N2As2. Arising from the broken inversion symmetry and strong spin–orbit coupling, a large Dzyaloshinskii–Moriya interaction is obtained in the Janus monolayer CrSi2N2As2. This, combined with the geometric frustration of its triangular lattice, gives rise to the skyrmion physics and long-sought AF-SkX in the presence of an external magnetic field. More intriguingly, this system presents two different antiferromagnetic skyrmion phases, and such a phenomenon is distinct from those reported in 3D systems. Furthermore, by contacting with Sc2CO2, the creation and annihilation of AF-SkX in Janus monolayer CrSi2N2As2 can be achieved through ferroelectricity. These findings greatly enrich the research on antiferromagnetic skyrmions.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Janus单层CrSi2N2As2中反铁磁Skyrmion晶体的理论预测
反铁磁斯基子晶体(AF-SkX)是一种规则的反铁磁斯基子阵列,是凝聚态物理领域的一种基本现象。到目前为止,很少有人提出实现AF-SkX的建议,而且大多数都是基于三维(3D)材料。本文中,我们利用第一性原理计算和蒙特卡罗模拟,报道了AF-SkX在Janus单层CrSi2N2As2的二维晶格中的识别。由于逆对称破缺和强自旋-轨道耦合,在Janus单层CrSi2N2As2中获得了较大的Dzyaloshinskii-Moriya相互作用。这与三角形晶格的几何挫折相结合,在外部磁场存在下产生了skyrmion物理和长期寻求的AF-SkX。更有趣的是,该系统呈现出两种不同的反铁磁斯基米子相,这种现象与3D系统中报道的不同。此外,通过与Sc2CO2接触,AF-SkX可以通过铁电性在Janus单层CrSi2N2As2中产生和湮灭。这些发现极大地丰富了反铁磁粒子的研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
期刊最新文献
Reconfiguring van der Waals Metal–Semiconductor Contacts via Selenium Intercalation/Deintercalation Post-Treatment Correction to “Direct Excitation Transfer in Plasmonic Metal-Chalcopyrite Hybrids: Insights from Single Particle Line Shape Analysis” Green Carbon Dots/CaCO3/Abamectin Colloidal Pesticide Formulation for Safer and More Effective Pest Management Automating Blueprints for the Assembly of Colloidal Quasicrystal Clusters Applications of Nanotechnology for Spatial Omics: Biological Structures and Functions at Nanoscale Resolution
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1