T. Sowlati, C. Salama, J. Sitch, G. Rabjohn, D. Smith
{"title":"Low voltage, high efficiency class E GaAs power amplifiers for mobile communications","authors":"T. Sowlati, C. Salama, J. Sitch, G. Rabjohn, D. Smith","doi":"10.1109/GAAS.1994.636960","DOIUrl":null,"url":null,"abstract":"In this paper a class E power amplifier for mobile communications is presented. The advantages of class E over class B and class C power amplifiers in a low voltage design is discussed. A fully integrated class E power amplifier operating at 835 MHz is designed, fabricated and tested. The circuit is implemented in a self-aligned-gate, depletion mode GaAs MESFET process. The amplifier delivers 24 dBm power to the load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 15 times the power dissipated in the transistors.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636960","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
In this paper a class E power amplifier for mobile communications is presented. The advantages of class E over class B and class C power amplifiers in a low voltage design is discussed. A fully integrated class E power amplifier operating at 835 MHz is designed, fabricated and tested. The circuit is implemented in a self-aligned-gate, depletion mode GaAs MESFET process. The amplifier delivers 24 dBm power to the load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 15 times the power dissipated in the transistors.
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