{"title":"Trench corner rounding technology using hydrogen annealing for highly reliable trench DMOSFETs","authors":"Sang-Gi Kim, Jongdae Kim, J. Koo, K. Nam, K. Cho","doi":"10.1109/ISPSD.2000.856779","DOIUrl":null,"url":null,"abstract":"A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current.
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